P Type , GaSb (Gallium Antimonide) Wafer , 2”, Prime Grade , Epi Ready
PAM-XIAMEN offers GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.It has a lattice constant of about 0.61 nm. GaSb can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.
2" GaSb Wafer Specification
| Item |
Specifications |
| Dopant |
Zinc |
| Conduction Type |
P-type |
| Wafer Diameter |
2" |
| Wafer Orientation |
(100)±0.5° |
| Wafer Thickness |
500±25um |
| Primary Flat Length |
16±2mm |
| Secondary Flat Length |
8±1mm |
| Carrier Concentration |
(5-100)x1017cm-3 |
| Mobility |
200-500cm2/V.s |
| EPD |
<2x103cm-2 |
| TTV |
<10um |
| BOW |
<10um |
| WARP |
<12um |
| Laser Marking |
upon request |
| Suface Finish |
P/E, P/P |
| Epi Ready |
yes |
| Package |
Single wafer container or cassette |
Basic Parameters at 300 K of GaSb Wafer
| Crystal structure |
Zinc Blende |
| Group of symmetry |
Td2-F43m |
| Number of atoms in 1 cm3 |
3.53·1022 |
| Debye temperature |
266 K |
| Density |
5.61 g cm-3 |
| Dielectric constant (static) |
15.7 |
| Dielectric constant (high frequency) |
14.4 |
| Effective electron mass |
0.041mo |
| Effective hole masses mh |
0.4mo |
| Effective hole masses mlp |
0.05mo |
| Electron affinity |
4.06 eV |
| Lattice constant |
6.09593 A |
| Optical phonon energy |
0.0297 eV |
Are You Looking for an GaSb Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including GaSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!
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P Type , GaSb (Gallium Antimonide) Wafer , 2”, Prime Grade , Epi Ready Images
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