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P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing

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P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing

Name: P Type GaAsGallium Arsenide Substrate 3 Dummy Grade Wafer Manufacturing
Brand: PAM-XIAMEN
Price: 1 USD

Brand Name : PAM-XIAMEN

Place of Origin : China

MOQ : 1-10,000pcs

Payment Terms : T/T

Supply Ability : 10,000 wafers/month

Delivery Time : 5-50 working days

Packaging Details : Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere

product name : P Type GaAs Substrate Wafer

Wafer Diamter : 3 inch

Conduction Type : SC/p-type with Zn dope Available

Grade : Dummy Grade

usage : LED Application

keyword : GaAs wafer

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P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing

PAM-XIAMEN develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications. We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers for LED Applications

Item	Specifications
Conduction Type	SC/p-type with Zn dope Available
Growth Method	VGF
Dopant	Mg
Wafer Diamter	3, inch
Crystal Orientation	(100)2°/6°/15° off (110)
OF	EJ or US
Carrier Concentration	E19
Resistivity at RT	—
Mobility	1500~3000cm2/V.sec
Etch Pit Density	<5000/cm2
Laser Marking	upon request
Surface Finish	P/E or P/P
Thickness	220~450um
Epitaxy Ready	Yes
Package	Single wafer container or cassette

Properties of GaAs Crystal

Properties	GaAs
Atoms/cm³	4.42 x 10²²
Atomic Weight	144.63
Breakdown Field	approx. 4 x 10⁵
Crystal Structure	Zincblende
Density (g/cm³)	5.32
Dielectric Constant	13.1
Effective Density of States in the Conduction Band, Nc (cm^-3)	4.7 x 10¹⁷
Effective Density of States in the Valence Band, Nv (cm^-3)	7.0 x 10¹⁸
Electron Affinity (V)	4.07
Energy Gap at 300K (eV)	1.424
Intrinsic Carrier Concentration (cm^-3)	1.79 x 10⁶
Intrinsic Debye Length (microns)	2250
Intrinsic Resistivity (ohm-cm)	108
Lattice Constant (angstroms)	5.6533
Linear Coefficient of Thermal Expansion,	6.86 x 10^-6
ΔL/L/ΔT (1/deg C)	6.86 x 10^-6
Melting Point (deg C)	1238
Minority Carrier Lifetime (s)	approx. 10^-8
Mobility (Drift)	8500
(cm²/V-s)
µ_n, electrons
Mobility (Drift)	400
(cm²/V-s)
µ_p, holes
Optical Phonon Energy (eV)	0.035
Phonon Mean Free Path (angstroms)	58
Phonon Mean Free Path (angstroms)	58
Specific Heat	0.35
(J/g-deg C)	0.35
Thermal Conductivity at 300 K	0.46
(W/cm-degC)	0.46
Thermal Diffusivity (cm²/sec)	0.24
Vapor Pressure (Pa)	100 at 1050 deg C;
Vapor Pressure (Pa)	1 at 900 deg C


Wavelength	Index
(µm)	Index
2.6	3.3239
2.8	3.3204
3	3.3169
3.2	3.3149
3.4	3.3129
3.6	3.3109
3.8	3.3089
4	3.3069
4.2	3.3057
4.4	3.3045
4.6	3.3034
4.8	3.3022
5	3.301
5.2	3.3001
5.4	3.2991
5.6	3.2982
5.8	3.2972
6	3.2963
6.2	3.2955
6.4	3.2947
6.6	3.2939
6.8	3.2931
7	3.2923
7.2	3.2914
7.4	3.2905
7.6	3.2896
7.8	3.2887
8	3.2878
8.2	3.2868
8.4	3.2859
8.6	3.2849
8.8	3.284
9	3.283
9.2	3.2818
9.4	3.2806
9.6	3.2794
9.8	3.2782
10	3.277
10.2	3.2761
10.4	3.2752
10.6	3.2743
10.8	3.2734
11	3.2725
11.2	3.2713
11.4	3.2701
11.6	3.269
11.8	3.2678
12	3.2666
12.2	3.2651
12.4	3.2635
12.6	3.262
12.8	3.2604
13	3.2589
13.2	3.2573
13.4	3.2557
13.6	3.2541

What is the Thermal properties of GaAs Wafer?

Bulk modulus	7.53·1011 dyn cm-2
Melting point	1240 °C
Specific heat	0.33 J g-1°C -1
Thermal conductivity	0.55 W cm-1 °C -1
Thermal diffusivity	0.31cm2s-1
Thermal expansion, linear	5.73·10-6 °C -1

	Temperature dependence of thermal conductivity n-type sample, no (cm-3): 1. 1016; 2. 1.4·1016; 3. 1018; p-type sample, po (cm-3): 4. 3·1018; 5. 1.2·1019.
	Temperature dependence of thermal conductivity (for high temperature) n-type sample, no (cm-3): 1. 7·1015; 2. 5·1016; 3. 4·1017; 4. 8·1018; p-type sample, po (cm-3): 5. 6·1019.
	Temperature dependence of specific heat at constant pressure Ccl= 3kbN = 0.345 J g-1°C -1. N is the number of atoms in 1 g og GaAs. Dashed line: Cp= (4π2Ccl / 5θo3)·T3 for θo= 345 K.
	Temperature dependence of linear expansion coefficient α

Melting point	Tm=1513 K
For 0 < P < 45 kbar	Tm= 1513 - 3.5P (P in kbar)
Saturated vapor pressure	(in Pascals)
1173 K	1
1323 K	100

Are You Looking for GaAs substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for GaAs wafers, send us enquiry today to learn more about how we can work with you to get you the GaAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

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